The M29W800DB45N6E is an 8Mb non-volatile flash memory device with an access time of 45ns. It operates within a temperature range of -40°C to 85°C and is supplied with a voltage between 2.7V and 3.6V. The device has a supply current of 10mA and is packaged in a TSOP package. The M29W800DB45N6E is compliant with RoHS regulations and is not radiation hardened.
PackageTSOP
Voltage2.7V
Current10mA
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Technical Specifications
Micron M29W800DB45N6E technical specifications.
General
| Access Time | 45ns |
| Access Time-Max | 45ns |
| Package/Case | TSOP |
| Density | 8Mb |
| Interface | Parallel |
| Max Operating Temperature | 85°C |
| Memory Size | 8Mb |
| Memory Type | Non-Volatile, , FLASH, NOR |
| Min Operating Temperature | -40°C |
| Max Supply Voltage | 3.6V |
| Min Supply Voltage | 2.7V |
| Packaging | Tray |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Supply Current | 10mA |
| Sync/Async | Asynchronous |
| Termination | SMD/SMT |
| Voltage | 2.7V |
Compliance
| RoHS | Compliant |
Datasheet
Micron M29W800DB45N6E Datasheet
Download the complete datasheet for Micron M29W800DB45N6E to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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