8M-bit NOR Flash memory with a parallel interface, offering 70ns maximum access time. Features include 1M x 8 or 512K x 16 word organization, a 20/19-bit address bus, and asymmetrical sectored architecture with a bottom boot block. Operates from 2.7V to 3.6V programming voltage and 3V/3.3V typical supply voltage. Packaged in a 48-pin TFBGA (Thin Fine Pitch Ball Grid Array) with a 0.8mm pin pitch, suitable for surface mounting.
PackageTFBGA
MountingSurface Mount
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Technical Specifications
Micron M29W800DB70ZA6 technical specifications.
General
| Basic Package Type | Ball Grid Array |
| Package Family Name | BGA |
| Package/Case | TFBGA |
| Package Description | Thin Fine Pitch Ball Grid Array |
| Lead Shape | Ball |
| Pin Count | 48 |
| PCB | 48 |
| Package Length (mm) | 9 |
| Package Width (mm) | 6 |
| Package Height (mm) | 1(Max) |
| Seated Plane Height (mm) | 1.2(Max) |
| Pin Pitch (mm) | 0.8 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Density | 8Mbit |
| Interface Type | Parallel |
| Maximum Operating Current | 10mA |
| Block Organization | Asymmetrical |
| Architecture | Sectored |
| Programming Voltage | 2.7 to 3.6V |
| Timing Type | Asynchronous |
| Maximum Access Time | 70ns |
| Number of Words | 1M/512K |
| Boot Block | Yes |
| Typical Operating Supply Voltage | 3|3.3V |
| Address Bus Width | 20/19bit |
| Location of Boot Block | Bottom |
| Number of Bits per Word | 8/16bit |
| Min Operating Temperature | -40°C |
| Max Operating Temperature | 85°C |
Compliance
| Cage Code | 6Y440 |
| EU RoHS | No |
| HTS Code | 8542320071 |
| Schedule B | 8542320070 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Micron M29W800DB70ZA6 Datasheet
Download the complete datasheet for Micron M29W800DB70ZA6 to view detailed technical specifications.
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