128M-bit NOR Flash memory with a parallel interface, featuring 8M x 16 organization and an 85ns maximum access time. This component operates at a typical 1.8V supply voltage, with programming voltages ranging from 1.7V to 2V and 8.5V to 12.6V. The memory utilizes a sectored architecture with an asymmetrical block organization and includes a boot block located at the bottom. Housed in an 88-pin TFBGA package measuring 10mm x 8mm x 0.85mm with a 0.8mm pin pitch, it is designed for surface mounting and operates within a temperature range of -25°C to 85°C.
PackageTFBGA
MountingSurface Mount
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Technical Specifications
Micron M30L0R7000B0ZAQ technical specifications.
General
Basic Package Type
Ball Grid Array
Package Family Name
BGA
Package/Case
TFBGA
Package Description
Thin Fine Pitch Ball Grid Array
Lead Shape
Ball
Pin Count
88
PCB
88
Package Length (mm)
10
Package Width (mm)
8
Package Height (mm)
0.85
Seated Plane Height (mm)
0.85
Pin Pitch (mm)
0.8
Package Material
Plastic
Mounting
Surface Mount
Density
128Mbit
Interface Type
Parallel
Maximum Operating Current
27mA
Block Organization
Asymmetrical
Architecture
Sectored
Programming Voltage
1.7 to 2|8.5 to 12.6V
Timing Type
Asynchronous|Synchronous
Maximum Access Time
85ns
Number of Words
8M
Boot Block
Yes
Typical Operating Supply Voltage
1.8V
Address Bus Width
23bit
Location of Boot Block
Bottom
Number of Bits per Word
16bit
Min Operating Temperature
-25°C
Max Operating Temperature
85°C
Compliance
Cage Code
6Y440
HTS Code
8542320071
Schedule B
8542320070
ECCN
3A991.b.1.a
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Micron M30L0R7000B0ZAQ Datasheet
Download the complete datasheet for Micron M30L0R7000B0ZAQ to view detailed technical specifications.
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