256M-bit NOR Flash memory, featuring a parallel interface and 16M x 16 organization. This component offers an 85ns maximum access time and operates at a typical 1.8V supply voltage, with programming voltages ranging from 1.7-2V and 8.5-9.5V. Housed in an 88-pin TFBGA package with a 0.8mm pitch, it supports surface mounting and includes a bottom boot block. The memory architecture is sectored with asymmetrical block organization, suitable for applications requiring 24-bit addressing and 16-bit words.
PackageTFBGA
MountingSurface Mount
Quick Jump:
Technical Specifications
Micron M30L0R8000B0ZAQ technical specifications.
General
| Basic Package Type | Ball Grid Array |
| Package Family Name | BGA |
| Package/Case | TFBGA |
| Package Description | Thin Fine Pitch Ball Grid Array |
| Lead Shape | Ball |
| Pin Count | 88 |
| PCB | 88 |
| Package Length (mm) | 10 |
| Package Width (mm) | 8 |
| Package Height (mm) | 0.85 |
| Seated Plane Height (mm) | 0.85 |
| Pin Pitch (mm) | 0.8 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Density | 256Mbit |
| Interface Type | Parallel |
| Maximum Operating Current | 27mA |
| Block Organization | Asymmetrical |
| Architecture | Sectored |
| Programming Voltage | 1.7 to 2|8.5 to 9.5V |
| Timing Type | Asynchronous|Synchronous |
| Maximum Access Time | 85ns |
| Number of Words | 16M |
| Boot Block | Yes |
| Typical Operating Supply Voltage | 1.8V |
| Address Bus Width | 24bit |
| Location of Boot Block | Bottom |
| Number of Bits per Word | 16bit |
| Min Operating Temperature | -25°C |
| Max Operating Temperature | 85°C |
Compliance
| Cage Code | 6Y440 |
| HTS Code | 8542320071 |
| Schedule B | 8542320070 |
| ECCN | 3A991.b.1.a |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Micron M30L0R8000B0ZAQ Datasheet
Download the complete datasheet for Micron M30L0R8000B0ZAQ to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.