256M-bit NOR Flash memory with a parallel interface, featuring 16M words x 16 bits per word. This component offers an 85ns maximum access time and operates at a typical supply voltage of 1.8V, with programming voltages ranging from 1.7-2V and 8.5-9.5V. It is housed in an 88-pin TFBGA package with a 0.8mm pin pitch, measuring 10mm x 8mm x 0.85mm, designed for surface mounting. The memory architecture is sectored and asymmetrical, with a boot block located at the top and a 24-bit address bus. Operating temperature range is -25°C to 85°C.
PackageTFBGA
MountingSurface Mount
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Technical Specifications
Micron M30L0R8000T0ZAQF technical specifications.
General
Basic Package Type
Ball Grid Array
Package Family Name
BGA
Package/Case
TFBGA
Package Description
Thin Fine Pitch Ball Grid Array
Lead Shape
Ball
Pin Count
88
PCB
88
Package Length (mm)
10
Package Width (mm)
8
Package Height (mm)
0.85
Seated Plane Height (mm)
0.85
Pin Pitch (mm)
0.8
Package Material
Plastic
Mounting
Surface Mount
Density
256Mbit
Interface Type
Parallel
Maximum Operating Current
27mA
Block Organization
Asymmetrical
Architecture
Sectored
Programming Voltage
1.7 to 2|8.5 to 9.5V
Timing Type
Asynchronous|Synchronous
Maximum Access Time
85ns
Number of Words
16M
Boot Block
Yes
Typical Operating Supply Voltage
1.8V
Address Bus Width
24bit
Location of Boot Block
Top
Number of Bits per Word
16bit
Min Operating Temperature
-25°C
Max Operating Temperature
85°C
Compliance
Cage Code
6Y440
HTS Code
8542320071
Schedule B
8542320070
ECCN
3A991.b.1.a
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Micron M30L0R8000T0ZAQF Datasheet
Download the complete datasheet for Micron M30L0R8000T0ZAQF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.