128M-bit NOR Flash memory with a parallel interface, offering 16M x 8 or 8M x 16 word configurations. Features a 110ns maximum access time and operates from 2.7V to 3.6V programming voltage, with typical supply voltages of 3V or 3.3V. Packaged in a 64-pin Thin Profile Ball Grid Array (TBGA) with a 13mm x 10mm footprint and 0.85mm maximum height, designed for surface mounting. This memory component supports a 24/23-bit address bus and operates across a temperature range of -40°C to 85°C.
PackageTBGA
MountingSurface Mount
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Technical Specifications
Micron M30LW128D110ZA6T technical specifications.
General
Basic Package Type
Ball Grid Array
Package Family Name
BGA
Package/Case
TBGA
Package Description
Thin Profile Ball Grid Array
Lead Shape
Ball
Pin Count
64
PCB
64
Package Length (mm)
13
Package Width (mm)
10
Package Height (mm)
0.85(Max)
Seated Plane Height (mm)
0.85(Max)
Pin Pitch (mm)
1
Package Material
Plastic
Mounting
Surface Mount
Density
128Mbit
Interface Type
Parallel
Maximum Operating Current
20mA
Block Organization
Symmetrical
Architecture
Sectored
Programming Voltage
2.7 to 3.6V
Timing Type
Asynchronous
Maximum Access Time
110ns
Number of Words
16M/8M
Boot Block
No
Typical Operating Supply Voltage
3|3.3V
Address Bus Width
24/23bit
Number of Bits per Word
8/16bit
Min Operating Temperature
-40°C
Max Operating Temperature
85°C
Compliance
Cage Code
6Y440
EU RoHS
No
HTS Code
8542320071
Schedule B
8542320070
ECCN
3A991.b.1.a
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Micron M30LW128D110ZA6T Datasheet
Download the complete datasheet for Micron M30LW128D110ZA6T to view detailed technical specifications.
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