32M-bit NOR Flash memory, featuring a parallel interface and 2M x 16/1M x 32 word organization. This integrated circuit offers a maximum access time of 120 ns and operates from a 3.3 V supply, with a programming voltage range of 2.7 to 3.6 V. The component is housed in an 80-pin Thin Profile Ball Grid Array (TBGA) package with a 1 mm pin pitch, designed for surface mounting. It supports both asynchronous and synchronous timing, with a maximum operating current of 50 mA and an operating temperature range of -40 °C to 85 °C.
PackageTBGA
MountingSurface Mount
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Technical Specifications
Micron M58LSW32B120ZA6T technical specifications.
General
Basic Package Type
Ball Grid Array
Package Family Name
BGA
Package/Case
TBGA
Package Description
Thin Profile Ball Grid Array
Lead Shape
Ball
Pin Count
80
PCB
80
Package Length (mm)
13
Package Width (mm)
10
Package Height (mm)
0.85(Max)
Seated Plane Height (mm)
0.85(Max)
Pin Pitch (mm)
1
Package Material
Plastic
Mounting
Surface Mount
Density
32Mbit
Interface Type
Parallel
Maximum Operating Current
50mA
Block Organization
Symmetrical
Architecture
Sectored
Programming Voltage
2.7 to 3.6V
Timing Type
Asynchronous|Synchronous
Maximum Access Time
120ns
Number of Words
2M/1M
Boot Block
No
Typical Operating Supply Voltage
3.3V
Address Bus Width
21/20bit
Number of Bits per Word
16/32bit
Min Operating Temperature
-40°C
Max Operating Temperature
85°C
Compliance
Cage Code
6Y440
HTS Code
8542320071
Schedule B
8542320070
ECCN
3A991.b.1.a
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Micron M58LSW32B120ZA6T Datasheet
Download the complete datasheet for Micron M58LSW32B120ZA6T to view detailed technical specifications.
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