32M-bit NOR Flash memory with a parallel interface, featuring a 2M x 16 configuration and 110ns maximum access time. This surface-mount component operates at a typical 3.3V supply voltage, with a programming voltage range of 2.7V to 3.6V and a maximum operating current of 30mA. The memory utilizes a sectored architecture and is housed in a 64-pin Thin Profile Ball Grid Array (TBGA) package measuring 13mm x 10mm x 0.8mm with a 1mm pin pitch. Operating across a temperature range of -40°C to 85°C, this integrated circuit offers a 21-bit address bus and 16-bit data bus.
PackageTBGA
MountingSurface Mount
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Technical Specifications
Micron M58LW032C110ZA6 technical specifications.
General
Basic Package Type
Ball Grid Array
Package Family Name
BGA
Package/Case
TBGA
Package Description
Thin Profile Ball Grid Array
Lead Shape
Ball
Pin Count
64
PCB
64
Package Length (mm)
13
Package Width (mm)
10
Package Height (mm)
0.8
Seated Plane Height (mm)
0.8
Pin Pitch (mm)
1
Package Material
Plastic
Mounting
Surface Mount
Density
32Mbit
Interface Type
Parallel
Maximum Operating Current
30mA
Block Organization
Symmetrical
Architecture
Sectored
Programming Voltage
2.7 to 3.6V
Timing Type
Asynchronous|Synchronous
Maximum Access Time
110ns
Number of Words
2M
Boot Block
No
Typical Operating Supply Voltage
3.3V
Address Bus Width
21bit
Number of Bits per Word
16bit
Min Operating Temperature
-40°C
Max Operating Temperature
85°C
Compliance
Cage Code
6Y440
EU RoHS
No
HTS Code
8542320071
Schedule B
8542320070
ECCN
3A991.b.1.a
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Micron M58LW032C110ZA6 Datasheet
Download the complete datasheet for Micron M58LW032C110ZA6 to view detailed technical specifications.
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