32M-bit NOR Flash memory with a parallel interface, featuring a 2M x 16 word organization and 120ns maximum access time. This surface-mount component operates at 1.8V typical supply voltage and supports asymmetrical, sectored block architecture with a bottom boot block. Packaged in a 48-pin Thin Fine Pitch Ball Grid Array (TFBGA) with 0.8mm pin pitch, it offers a maximum operating current of 6mA and operates across a -40°C to 85°C temperature range. Programming voltage ranges from 1.65 to 2.2V and 11.4 to 12.6V.
PackageTFBGA
MountingSurface Mount
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Technical Specifications
Micron M59DR032EB12ZB6T technical specifications.
General
Basic Package Type
Ball Grid Array
Package Family Name
BGA
Package/Case
TFBGA
Package Description
Thin Fine Pitch Ball Grid Array
Lead Shape
Ball
Pin Count
48
PCB
48
Package Length (mm)
12
Package Width (mm)
7
Package Height (mm)
1(Max)
Seated Plane Height (mm)
1(Max)
Pin Pitch (mm)
0.8
Package Material
Plastic
Mounting
Surface Mount
Density
32Mbit
Interface Type
Parallel
Maximum Operating Current
6mA
Block Organization
Asymmetrical
Architecture
Sectored
Programming Voltage
1.65 to 2.2|11.4 to 12.6V
Timing Type
Asynchronous
Maximum Access Time
120ns
Number of Words
2M
Boot Block
Yes
Typical Operating Supply Voltage
1.8V
Address Bus Width
21bit
Location of Boot Block
Bottom
Number of Bits per Word
16bit
Min Operating Temperature
-40°C
Max Operating Temperature
85°C
Compliance
Cage Code
6Y440
HTS Code
8542320071
Schedule B
8542320070
ECCN
3A991.b.1.a
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Micron M59DR032EB12ZB6T Datasheet
Download the complete datasheet for Micron M59DR032EB12ZB6T to view detailed technical specifications.
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