4Gb NAND Flash memory with a 512M x 8 word organization, offering a 25ns maximum access time. This asynchronous, parallel interface component operates from a 2.7V to 3.6V supply voltage, with a typical 3.3V operating voltage. Features include a 2KB page size and a 30-bit address bus, housed in a lead-free, RoHS compliant TFSOP package suitable for surface mounting. Designed for operation across a -40°C to 85°C temperature range.
PackageTFSOP
Current35mA
MountingSurface Mount
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Technical Specifications
Micron MT29F4G08ABADAWP-IT:D technical specifications.
General
| Access Time-Max | 25ns |
| Address Bus Width | 30b |
| Package/Case | TFSOP |
| Density | 4Gb |
| Interface | Parallel |
| Lead Free | Lead Free |
| Max Operating Temperature | 85°C |
| Max Supply Voltage | 3.6V |
| Memory Size | 500000000B |
| Memory Type | FLASH, , NAND |
| Min Operating Temperature | -40°C |
| Min Supply Voltage | 2.7V |
| Mount | Surface Mount |
| Operating Supply Voltage | 3.3V |
| Package Quantity | 1000 |
| Packaging | Tray |
| Page Size | 2KB |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Supply Current | 35mA |
| Sync/Async | Asynchronous |
| Word Size | 8b |
Compliance
| RoHS | Compliant |
Datasheet
Micron MT29F4G08ABADAWP-IT:D Datasheet
Download the complete datasheet for Micron MT29F4G08ABADAWP-IT:D to view detailed technical specifications.
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