DDR2 SDRAM memory chip with 512Mbit density, organized as 128Mx4 for a 4-bit data bus width. Features a maximum clock rate of 667 MHz and operates at a typical 1.8V supply voltage. Housed in a 60-pin FBGA package with a 0.8mm pin pitch, this surface-mount component offers 4 internal banks and a maximum access time of 0.45 ns.
PackageFBGA
MountingSurface Mount
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Technical Specifications
Micron MT47H128M4CF-3E:FTR technical specifications.
General
Basic Package Type
Ball Grid Array
Package Family Name
BGA
Package/Case
FBGA
Package Description
Fine Pitch Ball Grid Array
Lead Shape
Ball
Pin Count
60
PCB
60
Package Length (mm)
10
Package Width (mm)
8
Package Height (mm)
0.8
Pin Pitch (mm)
0.8
Package Material
Plastic
Mounting
Surface Mount
Density
512Mbit
Type
DDR2 SDRAM
Organization
128Mx4
Data Bus Width
4bit
Maximum Clock Rate
667MHz
Number of Internal Banks
4
Number of Words per Bank
32M
Maximum Access Time
0.45ns
Density in Bits
536870912bit
Address Bus Width
16bit
Maximum Operating Current
180mA
Typical Operating Supply Voltage
1.8V
Max Operating Supply Voltage
1.9V
Min Operating Supply Voltage
1.7V
Min Operating Temperature
0°C
Max Operating Temperature
85°C
Compliance
Cage Code
6Y440
EU RoHS
Yes
HTS Code
8542320028
Schedule B
8542320015
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU
Datasheet
Micron MT47H128M4CF-3E:FTR Datasheet
Download the complete datasheet for Micron MT47H128M4CF-3E:FTR to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.