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Technical Specifications
Micron NAND01GW3B2BN6E technical specifications.
General
| Access Time | 25us |
| Address Bus Width | 8b |
| Package/Case | TSOP |
| Density | 1Gb |
| Interface | Parallel |
| Lead Free | Lead Free |
| Max Operating Temperature | 70°C |
| Min Operating Temperature | 0°C |
| Max Supply Voltage | 3.6V |
| Memory Size | 1Gb |
| Memory Type | NAND, FLASH, |
| Min Supply Voltage | 2.7V |
| Page Size | 64Words |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
Compliance
| RoHS | Compliant |
Datasheet
Micron NAND01GW3B2BN6E Datasheet
Download the complete datasheet for Micron NAND01GW3B2BN6E to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.