1G-bit Parallel NAND Flash memory, featuring a 64M x 16 word organization and sectored architecture. Operates at 3.3V with a maximum operating current of 30mA and a maximum access time of 25,000ns. Packaged in a 63-pin TFBGA (Thin Fine Pitch Ball Grid Array) with surface mount configuration, measuring 12mm x 9.5mm x 0.8mm. Suitable for operation within a temperature range of 0°C to 70°C.
PackageTFBGA
MountingSurface Mount
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Technical Specifications
Micron NAND01GW4B2BZB1T technical specifications.
General
| Basic Package Type | Ball Grid Array |
| Package Family Name | BGA |
| Package/Case | TFBGA |
| Package Description | Thin Fine Pitch Ball Grid Array |
| Lead Shape | Ball |
| Pin Count | 63 |
| PCB | 63 |
| Package Length (mm) | 12 |
| Package Width (mm) | 9.5 |
| Package Height (mm) | 0.8 |
| Seated Plane Height (mm) | 1.2(Max) |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Density | 1Gbit |
| Interface Type | Parallel |
| Maximum Operating Current | 30mA |
| Block Organization | Symmetrical |
| Architecture | Sectored |
| Timing Type | Asynchronous |
| Maximum Access Time | 25000ns |
| Number of Words | 64M |
| Boot Block | No |
| Typical Operating Supply Voltage | 3.3V |
| Address Bus Width | 27bit |
| Number of Bits per Word | 16bit |
| Min Operating Temperature | 0°C |
| Max Operating Temperature | 70°C |
Compliance
| Cage Code | 6Y440 |
| EU RoHS | No |
| HTS Code | 8542320071 |
| Schedule B | 8542320070 |
| ECCN | 3A991.b.1.a |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Micron NAND01GW4B2BZB1T Datasheet
Download the complete datasheet for Micron NAND01GW4B2BZB1T to view detailed technical specifications.
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