4G-bit parallel NAND flash memory, featuring a 512M x 8 organization and 1.8V operating voltage. This surface-mount component utilizes a Thin Fine Pitch Ball Grid Array (TFBGA) package with 63 pins, measuring 12mm x 9.5mm x 0.8mm. It offers asynchronous timing with a maximum access time of 25,000 ns and a maximum operating current of 15 mA. Operating across a temperature range of -40°C to 85°C, this memory is designed for sectored architecture and does not include a boot block.
Micron NAND04GR3B2AZB6 technical specifications.
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