4G-bit parallel NAND Flash memory, featuring a 512M x 8 organization and sectored architecture. This surface-mount component operates at 1.8V with a maximum access time of 25µs and a maximum operating current of 15mA. Housed in a 63-pin, 12mm x 9.5mm x 0.8mm Thin Fine Pitch Ball Grid Array (TFBGA) package, it supports a 30-bit address bus and operates across a temperature range of -40°C to 85°C.
Micron NAND04GR3B2BZB6F technical specifications.
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