4G-bit parallel NAND Flash memory, featuring a 256M x 16 word organization and sectored architecture. This component operates at a typical 1.8V supply voltage with a maximum operating current of 15 mA. It offers a maximum access time of 25,000 ns and utilizes a 29-bit address bus. The memory is housed in a 48-pin TSOP (Thin Small Outline Package) with gull-wing leads, designed for surface mounting.
PackageTSOP
MountingSurface Mount
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Technical Specifications
Micron NAND04GR4B2BN6 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOP
Package/Case
TSOP
Package Description
Thin Small Outline Package
Lead Shape
Gull-wing
Pin Count
48
PCB
48
Package Length (mm)
12
Package Width (mm)
18.4
Package Height (mm)
1
Seated Plane Height (mm)
1.2(Max)
Pin Pitch (mm)
0.5
Package Material
Plastic
Mounting
Surface Mount
Density
4Gbit
Interface Type
Parallel
Maximum Operating Current
15mA
Block Organization
Symmetrical
Architecture
Sectored
Timing Type
Asynchronous
Maximum Access Time
25000ns
Number of Words
256M
Boot Block
No
Typical Operating Supply Voltage
1.8V
Address Bus Width
29bit
Number of Bits per Word
16bit
Min Operating Temperature
-40°C
Max Operating Temperature
85°C
Compliance
Cage Code
6Y440
EU RoHS
No
HTS Code
8542320071
Schedule B
8542320070
ECCN
3A991.b.1.a
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Micron NAND04GR4B2BN6 Datasheet
Download the complete datasheet for Micron NAND04GR4B2BN6 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.