4G-bit parallel NAND Flash memory with a 256M x 16 organization. Features a 1.8V operating supply voltage and a 63-pin Thin Fine Pitch Ball Grid Array (TFBGA) package for surface mounting. Offers a maximum access time of 25,000 ns and operates within a temperature range of -40°C to 85°C. This memory component utilizes a sectored architecture and has a maximum operating current of 15 mA.
Micron NAND04GR4B2BZB6 technical specifications.
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