4G-bit Parallel NAND Flash memory, featuring a 512M x 8 organization and a 3.3V operating voltage. This surface-mount component utilizes a 63-pin VFBGA package with dimensions of 12mm x 9.5mm x 0.7mm (Max). It offers asynchronous timing with a maximum access time of 25,000 ns and a maximum operating current of 30 mA. Operating across a temperature range of -40°C to 85°C, this memory boasts a sectored architecture and a 30-bit address bus.
Micron NAND04GW3B2BZA6 technical specifications.
Download the complete datasheet for Micron NAND04GW3B2BZA6 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.