4G-bit parallel NAND Flash memory with 512M x 8 organization. Features a 3.3V operating voltage and 25µs access time. Packaged in a 63-pin TFBGA (Thin Fine Pitch Ball Grid Array) with surface mount configuration. Operates across a temperature range of -40°C to 85°C.
PackageTFBGA
MountingSurface Mount
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Technical Specifications
Micron NAND04GW3B2BZB6T technical specifications.
General
Basic Package Type
Ball Grid Array
Package Family Name
BGA
Package/Case
TFBGA
Package Description
Thin Fine Pitch Ball Grid Array
Lead Shape
Ball
Pin Count
63
PCB
63
Package Length (mm)
12
Package Width (mm)
9.5
Package Height (mm)
0.8
Seated Plane Height (mm)
1.2(Max)
Package Material
Plastic
Mounting
Surface Mount
Density
4Gbit
Interface Type
Parallel
Maximum Operating Current
30mA
Block Organization
Symmetrical
Architecture
Sectored
Timing Type
Asynchronous
Maximum Access Time
25000ns
Number of Words
512M
Boot Block
No
Typical Operating Supply Voltage
3.3V
Address Bus Width
30bit
Number of Bits per Word
8bit
Min Operating Temperature
-40°C
Max Operating Temperature
85°C
Compliance
Cage Code
6Y440
EU RoHS
No
HTS Code
8542320071
Schedule B
8542320070
ECCN
3A991.b.1.a
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Micron NAND04GW3B2BZB6T Datasheet
Download the complete datasheet for Micron NAND04GW3B2BZB6T to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.