4G-bit parallel NAND Flash memory, featuring a 512M x 8 organization and 3.3V typical operating voltage. This component offers a 25µs maximum access time and operates with a maximum current of 30mA. Packaged in a 48-pin TSOP (Thin Small Outline Package) with gull-wing leads, it is designed for surface mounting. The memory architecture is sectored and symmetrical, with an 8-bit address bus width, suitable for operation between -40°C and 85°C.
Micron NAND04GW3B2CN6T technical specifications.
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