4G-bit parallel NAND Flash memory, featuring a 512M x 8 organization and 3.3V typical operating voltage. This component offers a 25µs maximum access time and operates with a maximum current of 30mA. Packaged in a 48-pin TSOP (Thin Small Outline Package) with gull-wing leads, it is designed for surface mounting. The memory architecture is sectored and symmetrical, with an 8-bit address bus width, suitable for operation between -40°C and 85°C.
PackageTSOP
MountingSurface Mount
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Technical Specifications
Micron NAND04GW3B2CN6T technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOP
Package/Case
TSOP
Package Description
Thin Small Outline Package
Lead Shape
Gull-wing
Pin Count
48
PCB
48
Package Length (mm)
12
Package Width (mm)
18.4
Package Height (mm)
1
Seated Plane Height (mm)
1.2(Max)
Pin Pitch (mm)
0.5
Package Material
Plastic
Mounting
Surface Mount
Density
4Gbit
Interface Type
Parallel
Maximum Operating Current
30mA
Block Organization
Symmetrical
Architecture
Sectored
Programming Voltage
2.7 to 3.6V
Timing Type
Asynchronous
Maximum Access Time
25000ns
Number of Words
512M
Boot Block
No
Typical Operating Supply Voltage
3.3V
Address Bus Width
8bit
Number of Bits per Word
8bit
Min Operating Temperature
-40°C
Max Operating Temperature
85°C
Compliance
Cage Code
6Y440
EU RoHS
No
HTS Code
8542320071
Schedule B
8542320070
ECCN
3A991.b.1.a
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Micron NAND04GW3B2CN6T Datasheet
Download the complete datasheet for Micron NAND04GW3B2CN6T to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.