4G-bit parallel NAND Flash memory, featuring a 512M x 8 organization and 3.3V operating voltage. This surface-mount component utilizes a 63-pin Thin Fine Pitch Ball Grid Array (TFBGA) package with dimensions of 12mm x 9.5mm x 0.8mm. It offers a maximum access time of 25,000 ns and operates within a temperature range of 0°C to 70°C, with a maximum operating current of 30 mA. The memory architecture is sectored and asynchronous, with a 30-bit address bus.
Micron NAND04GW3B2CZB1F technical specifications.
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