8G-bit parallel NAND flash memory with 1G x 8 organization. Features a 1.8V operating voltage and 48-pin TSOP package for surface mounting. Offers a maximum access time of 25,000 ns and a maximum operating current of 15 mA. Symmetrical, sectored architecture with a 31-bit address bus. Operating temperature range from 0°C to 70°C.
Micron NAND08GR3B2BN1 technical specifications.
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