8G-bit parallel NAND flash memory, featuring a 512M x 16 word organization and a 30-bit address bus. This component operates at a typical 3.3V supply voltage with a maximum operating current of 30mA. It utilizes a sectored, symmetrical block architecture and an asynchronous timing type, offering a maximum access time of 25,000 ns. The device is housed in a 48-pin TSOP (Thin Small Outline Package) with gull-wing leads, designed for surface mounting.
Micron NAND08GW4B2AN6 technical specifications.
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