128M-bit SLC NAND Flash memory, featuring a parallel interface and 8M x 16 word organization. This component operates at 1.8V with a maximum access time of 12µs. Housed in a 55-pin TFBGA package (10mm x 8mm x 0.8mm), it supports surface mounting. The memory utilizes a symmetrical, sectored architecture and is suitable for operation between 0°C and 70°C.
PackageTFBGA
MountingSurface Mount
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Technical Specifications
Micron NAND128R4A2BZB1T technical specifications.
General
| Basic Package Type | Ball Grid Array |
| Package Family Name | BGA |
| Package/Case | TFBGA |
| Package Description | Thin Fine Pitch Ball Grid Array |
| Lead Shape | Ball |
| Pin Count | 55 |
| PCB | 55 |
| Package Length (mm) | 10 |
| Package Width (mm) | 8 |
| Package Height (mm) | 0.8 |
| Seated Plane Height (mm) | 1.2(Max) |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Density | 128Mbit |
| Interface Type | Parallel |
| Maximum Operating Current | 15mA |
| Block Organization | Symmetrical |
| Architecture | Sectored |
| Timing Type | Asynchronous |
| Maximum Access Time | 12000ns |
| Number of Words | 8M |
| Boot Block | No |
| Typical Operating Supply Voltage | 1.8V |
| Address Bus Width | 26bit |
| Number of Bits per Word | 16bit |
| Min Operating Temperature | 0°C |
| Max Operating Temperature | 70°C |
Compliance
| Cage Code | 6Y440 |
| EU RoHS | No |
| HTS Code | 8542320071 |
| Schedule B | 8542320070 |
| ECCN | 3A991.b.1.a |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Micron NAND128R4A2BZB1T Datasheet
Download the complete datasheet for Micron NAND128R4A2BZB1T to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.