128M-bit SLC NAND Flash memory, featuring a parallel interface and sectored architecture. This component operates with a typical supply voltage of 3V or 3.3V and offers a density of 128M bits organized as 16M words x 8 bits. It boasts a maximum access time of 12,000 ns and a maximum operating current of 20 mA. Packaged in a 55-pin Thin Fine Pitch Ball Grid Array (TFBGA) with surface mount capability, it measures 10mm x 8mm x 0.8mm and operates within a temperature range of -40°C to 85°C.
PackageTFBGA
MountingSurface Mount
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Technical Specifications
Micron NAND128W3A0AZB6T technical specifications.
General
Basic Package Type
Ball Grid Array
Package Family Name
BGA
Package/Case
TFBGA
Package Description
Thin Fine Pitch Ball Grid Array
Lead Shape
Ball
Pin Count
55
PCB
55
Package Length (mm)
10
Package Width (mm)
8
Package Height (mm)
0.8
Seated Plane Height (mm)
1.2(Max)
Package Material
Plastic
Mounting
Surface Mount
Density
128Mbit
Interface Type
Parallel
Maximum Operating Current
20mA
Block Organization
Symmetrical
Architecture
Sectored
Timing Type
Asynchronous
Maximum Access Time
12000ns
Number of Words
16M
Boot Block
No
Typical Operating Supply Voltage
3|3.3V
Address Bus Width
27bit
Number of Bits per Word
8bit
Min Operating Temperature
-40°C
Max Operating Temperature
85°C
Compliance
Cage Code
6Y440
EU RoHS
No
HTS Code
8542320071
Schedule B
8542320070
ECCN
3A991.b.1.a
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Micron NAND128W3A0AZB6T Datasheet
Download the complete datasheet for Micron NAND128W3A0AZB6T to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.