128M-bit SLC NAND Flash memory, featuring a parallel interface and sectored architecture. This component offers 16M words x 8 bits per word, with a 27-bit address bus. Operates at 3V or 3.3V with a maximum operating current of 20mA and an access time of 12µs. Packaged in a 55-pin Thin Fine Pitch Ball Grid Array (TFBGA) for surface mounting, with dimensions of 10mm x 8mm x 0.8mm. Suitable for operation between 0°C and 70°C.
Micron NAND128W3A2BZB1E technical specifications.
Download the complete datasheet for Micron NAND128W3A2BZB1E to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.