256M-bit SLC NAND Flash memory, featuring a parallel interface and a 32M x 8 word organization. This integrated circuit operates at 3V/3.3V with a maximum access time of 12,000 ns. Packaged in a 55-pin TFBGA (Thin Fine Pitch Ball Grid Array) with surface mount configuration, it offers a symmetrical block organization and sectored architecture. Operating current is 20 mA, with an operating temperature range of -40°C to 85°C.
PackageTFBGA
MountingSurface Mount
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Technical Specifications
Micron NAND256W3A2AZB6E technical specifications.
General
Basic Package Type
Ball Grid Array
Package Family Name
BGA
Package/Case
TFBGA
Package Description
Thin Fine Pitch Ball Grid Array
Lead Shape
Ball
Pin Count
55
PCB
55
Package Length (mm)
10
Package Width (mm)
8
Package Height (mm)
0.8
Seated Plane Height (mm)
1.2(Max)
Package Material
Plastic
Mounting
Surface Mount
Density
256Mbit
Interface Type
Parallel
Maximum Operating Current
20mA
Block Organization
Symmetrical
Architecture
Sectored
Timing Type
Asynchronous
Maximum Access Time
12000ns
Number of Words
32M
Boot Block
No
Typical Operating Supply Voltage
3|3.3V
Address Bus Width
27bit
Number of Bits per Word
8bit
Min Operating Temperature
-40°C
Max Operating Temperature
85°C
Compliance
Cage Code
6Y440
EU RoHS
Yes
HTS Code
8542320071
Schedule B
8542320070
ECCN
3A991.b.1.a
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Micron NAND256W3A2AZB6E Datasheet
Download the complete datasheet for Micron NAND256W3A2AZB6E to view detailed technical specifications.
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