SLC NAND Flash memory, 256M-bit density, featuring a parallel interface with a 26-bit address bus and 16-bit words. Operates at 3V or 3.3V with a maximum operating current of 20mA. This asynchronous memory boasts a maximum access time of 12µs and a symmetrical, sectored block organization. Packaged in a 55-pin Thin Fine Pitch Ball Grid Array (TFBGA) measuring 10mm x 8mm x 0.8mm, suitable for surface mounting.
PackageTFBGA
MountingSurface Mount
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Technical Specifications
Micron NAND256W4A0BZB6F technical specifications.
General
Basic Package Type
Ball Grid Array
Package Family Name
BGA
Package/Case
TFBGA
Package Description
Thin Fine Pitch Ball Grid Array
Lead Shape
Ball
Pin Count
55
PCB
55
Package Length (mm)
10
Package Width (mm)
8
Package Height (mm)
0.8
Seated Plane Height (mm)
1.2(Max)
Package Material
Plastic
Mounting
Surface Mount
Density
256Mbit
Interface Type
Parallel
Maximum Operating Current
20mA
Block Organization
Symmetrical
Architecture
Sectored
Timing Type
Asynchronous
Maximum Access Time
12000ns
Number of Words
16M
Boot Block
No
Typical Operating Supply Voltage
3|3.3V
Address Bus Width
26bit
Number of Bits per Word
16bit
Min Operating Temperature
-40°C
Max Operating Temperature
85°C
Compliance
Cage Code
6Y440
EU RoHS
Yes
HTS Code
8542320071
Schedule B
8542320070
ECCN
3A991.b.1.a
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Micron NAND256W4A0BZB6F Datasheet
Download the complete datasheet for Micron NAND256W4A0BZB6F to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.