512M-bit SLC NAND Flash memory with a parallel interface, featuring 64M words x 8 bits per word. This surface-mount component utilizes a 63-pin VFBGA package with a 0.8mm pin pitch and a maximum height of 0.7mm. Operating at a typical 1.8V supply, it offers a maximum access time of 15,000 ns and a maximum operating current of 15mA. The memory architecture is sectored and asynchronous, with a 27-bit address bus, and operates within a temperature range of 0°C to 70°C.
PackageVFBGA
MountingSurface Mount
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Technical Specifications
Micron NAND512R3A2BZA1T technical specifications.
General
Basic Package Type
Ball Grid Array
Package Family Name
BGA
Package/Case
VFBGA
Package Description
Very Thin Fine Pitch Ball Grid Array
Lead Shape
Ball
Pin Count
63
PCB
63
Package Length (mm)
11
Package Width (mm)
9
Package Height (mm)
0.7(Max)
Seated Plane Height (mm)
0.7(Max)
Pin Pitch (mm)
0.8
Package Material
Plastic
Mounting
Surface Mount
Density
512Mbit
Interface Type
Parallel
Maximum Operating Current
15mA
Block Organization
Symmetrical
Architecture
Sectored
Timing Type
Asynchronous
Maximum Access Time
15000ns
Number of Words
64M
Boot Block
No
Typical Operating Supply Voltage
1.8V
Address Bus Width
27bit
Number of Bits per Word
8bit
Min Operating Temperature
0°C
Max Operating Temperature
70°C
Compliance
Cage Code
6Y440
EU RoHS
No
HTS Code
8542320071
Schedule B
8542320070
ECCN
3A991.b.1.a
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Micron NAND512R3A2BZA1T Datasheet
Download the complete datasheet for Micron NAND512R3A2BZA1T to view detailed technical specifications.
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