512M-bit SLC NAND Flash memory with a parallel interface, featuring 64M words x 8 bits per word. Operates at 3V/3.3V with a maximum access time of 12,000 ns and a maximum operating current of 20 mA. Packaged in a 55-pin Thin Fine Pitch Ball Grid Array (TFBGA) with a 0.8mm pin pitch, suitable for surface mounting. Offers symmetrical block organization and sectored architecture, with an operating temperature range of 0°C to 70°C.
Micron NAND512W3A0BZB1T technical specifications.
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