512M-bit SLC NAND Flash memory, featuring a parallel interface and 64M x 8 organization. This component operates at 3V/3.3V with a maximum access time of 12µs and a maximum operating current of 20mA. Packaged in a 55-pin TFBGA (Thin Fine Pitch Ball Grid Array) with a 0.8mm pitch, it supports surface mounting. The memory utilizes a sectored architecture and is suitable for operation within a 0°C to 70°C temperature range.
PackageTFBGA
MountingSurface Mount
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Technical Specifications
Micron NAND512W3A2BZB1E technical specifications.
General
Basic Package Type
Ball Grid Array
Package Family Name
BGA
Package/Case
TFBGA
Package Description
Thin Fine Pitch Ball Grid Array
Lead Shape
Ball
Pin Count
55
PCB
55
Package Length (mm)
10
Package Width (mm)
8
Package Height (mm)
0.8
Seated Plane Height (mm)
0.8
Pin Pitch (mm)
0.8
Package Material
Plastic
Mounting
Surface Mount
Density
512Mbit
Interface Type
Parallel
Maximum Operating Current
20mA
Block Organization
Symmetrical
Architecture
Sectored
Timing Type
Asynchronous
Maximum Access Time
12000ns
Number of Words
64M
Boot Block
No
Typical Operating Supply Voltage
3|3.3V
Address Bus Width
27bit
Number of Bits per Word
8bit
Min Operating Temperature
0°C
Max Operating Temperature
70°C
Compliance
Cage Code
6Y440
EU RoHS
Yes
HTS Code
8542320071
Schedule B
8542320070
ECCN
3A991.b.1.a
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Micron NAND512W3A2BZB1E Datasheet
Download the complete datasheet for Micron NAND512W3A2BZB1E to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.