512M-bit NOR Flash memory with parallel interface, offering 64M x 8 or 32M x 16 word configurations. Features a 100ns maximum access time and operates from 3V/3.3V supply. Housed in a 64-pin Fortified Ball Grid Array (BGA) package with surface mount capability, this component supports symmetrical block organization and sectored architecture, including boot block functionality at the bottom or top. Operating temperature range is -40°C to 85°C.
PackageFortified BGA
MountingSurface Mount
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Technical Specifications
Micron RC28F512M29EWH technical specifications.
General
Basic Package Type
Ball Grid Array
Package Family Name
BGA
Package/Case
Fortified BGA
Package Description
Fortified Ball Grid Array
Lead Shape
Ball
Pin Count
64
PCB
64
Package Length (mm)
13
Package Width (mm)
11
Package Height (mm)
0.8
Seated Plane Height (mm)
1.4(Max)
Pin Pitch (mm)
1
Package Material
Plastic
Mounting
Surface Mount
Density
512Mbit
Interface Type
Parallel
Maximum Operating Current
31mA
Block Organization
Symmetrical
Architecture
Sectored
Programming Voltage
11.5 to 12.5V
Timing Type
Asynchronous
Maximum Access Time
100ns
Number of Words
64M/32M
Boot Block
Yes
Typical Operating Supply Voltage
3|3.3V
Address Bus Width
26/25bit
Location of Boot Block
Bottom|Top
Number of Bits per Word
8/16bit
Min Operating Temperature
-40°C
Max Operating Temperature
85°C
Compliance
Cage Code
6Y440
EU RoHS
No
HTS Code
8542320071
Schedule B
8542320070
ECCN
3A991.b.1.a
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Micron RC28F512M29EWH Datasheet
Download the complete datasheet for Micron RC28F512M29EWH to view detailed technical specifications.
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