The 1N4449 is a general purpose rectifier diode with a maximum operating temperature of 150°C and a minimum operating temperature of -65°C. It has a maximum reverse voltage of 75V and a maximum reverse current of 25nA. The diode is packaged in a DO-35 package and is mounted through a hole. It is not radiation hardened and is not RoHS compliant.
Microsemi 1N4449 technical specifications.
| Average Rectified Current | 200mA |
| Package/Case | DO-35 |
| Forward Current | 200mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Repetitive Reverse Voltage (Vrrm) | 75V |
| Max Reverse Current | 25nA |
| Max Reverse Voltage (DC) | 75V |
| Mount | Through Hole |
| Packaging | Bulk |
| Peak Non-Repetitive Surge Current | 500mA |
| Radiation Hardening | No |
| Reverse Recovery Time | 4ns |
| RoHS Compliant | No |
| RoHS | Not CompliantNo |
Download the complete datasheet for Microsemi 1N4449 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.