General purpose rectifier diode featuring a 3A average rectified current and 100V repetitive reverse voltage. This single-element silicon diode offers a 6A forward current and a 125A peak non-repetitive surge current. Designed for through-hole mounting, it operates within a temperature range of -65°C to 175°C and boasts a hermetically sealed glass package with tin/lead contact plating. Radiation hardening is included, with a reverse recovery time of 30ns.
MountingThrough Hole
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Technical Specifications
Microsemi 1N5809 technical specifications.
General
| Average Rectified Current | 3A |
| Contact Plating | Tin, Lead |
| Element Configuration | Single |
| Forward Current | 6A |
| Lead Free | Contains Lead |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Max Repetitive Reverse Voltage (Vrrm) | 100V |
| Max Reverse Current | 5uA |
| Max Reverse Voltage (DC) | 100V |
| Mount | Through Hole |
| Package Quantity | 1 |
| Packaging | Bulk |
| Peak Non-Repetitive Surge Current | 125A |
| Radiation Hardening | Yes |
| Reverse Recovery Time | 30ns |
| RoHS Compliant | No |
Compliance
| RoHS | Not CompliantYes |
Datasheet
Microsemi 1N5809 Datasheet
Download the complete datasheet for Microsemi 1N5809 to view detailed technical specifications.
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