General purpose rectifier diode featuring a single silicon element within a hermetically sealed, glass DO-35 package. This axial-terminal component offers a maximum continuous forward current of 0.4A and a maximum power dissipation of 0.5W. Operating across a wide temperature range from -65°C to 175°C, this 2-terminal device is designed for reliable rectification applications.
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Technical Specifications
Microsemi 1N647-1 technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 2 |
| Min Operating Temperature | -65 |
| Terminal Position | AXIAL |
| JEDEC Package Code | DO-35 |
| Pin Count | 2 |
| Number of Elements | 1 |
| Diode Element Material | SILICON |
| Diode Type | RECTIFIER DIODE |
| Power Dissipation-Max | 0.5 |
Compliance
| RoHS | No |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.70 |
| REACH | unknown |
| Military Spec | False |
Datasheet
Microsemi 1N647-1 Datasheet
Download the complete datasheet for Microsemi 1N647-1 to view detailed technical specifications.
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