Microsemi
APT10040LVRG
Power Field-Effect Transistor, 25A I(D), 1000V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN
Current Rating25A
MountingThrough Hole
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Technical Specifications
Microsemi APT10040LVRG technical specifications.
General
Continuous Drain Current (ID)
25A
Current Rating
25A
Drain to Source Voltage (Vdss)
1kV
Fall Time
9ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
9.4nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Mount
Through Hole
Packaging
Rail/Tube
Radiation Hardening
No
RoHS Compliant
Yes
Turn-Off Delay Time
57ns
Turn-On Delay Time
13ns
DC Rated Voltage
1kV
Compliance
RoHS
Compliant
Datasheet
Microsemi APT10040LVRG Datasheet
Download the complete datasheet for Microsemi APT10040LVRG to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.