N-Channel Power MOSFET featuring 1000V drain-source voltage and 21A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 0.45-ohm drain-to-source resistance. Designed for chassis mounting with a screw terminal, it operates within a -55°C to 150°C temperature range and boasts a maximum power dissipation of 460W. Key switching characteristics include a 10ns turn-on delay and an 8ns fall time.
PackageSOT-227-4
Current Rating21A
MountingChassis Mount, Screw
PolarityN-CHANNEL
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Technical Specifications
Microsemi APT10045JLL technical specifications.
General
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 21A |
| Current Rating | 21A |
| Drain to Source Resistance | 450mR |
| Drain to Source Voltage (Vdss) | 1kV |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.6mm |
| Input Capacitance | 4.35nF |
| Lead Free | Lead Free |
| Length | 38.2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 460W |
| Mount | Chassis Mount, Screw |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 460W |
| Radiation Hardening | No |
| Rds On Max | 450mR |
| RoHS Compliant | Yes |
| Series | POWER MOS 7® |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | 1kV |
| Weight | 1.058219oz |
| Width | 25.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Microsemi APT10045JLL Datasheet
Download the complete datasheet for Microsemi APT10045JLL to view detailed technical specifications.
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