Quick Jump:
Technical Specifications
Microsemi APT12M80B technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 13A |
| Current Rating | 12A |
| Drain to Source Voltage (Vdss) | 800V |
| Fall Time | 18ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 2.47nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 335W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Packaging | Rail/Tube |
| Power Dissipation | 335W |
| Radiation Hardening | No |
| Rds On Max | 800mR |
| RoHS Compliant | Yes |
| Series | POWER MOS 8™ |
| Turn-Off Delay Time | 60ns |
| Turn-On Delay Time | 14ns |
| DC Rated Voltage | 800V |
Compliance
| RoHS | Compliant |
Datasheet
Microsemi APT12M80B Datasheet
Download the complete datasheet for Microsemi APT12M80B to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
