Microsemi
APT12M80B
Power Field-Effect Transistor, 13A I(D), 800V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, ROHS COMPLIANT, TO-247, 3 PIN
PackageTO-247-3
Current Rating12A
MountingThrough Hole
Power335W
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Technical Specifications
Microsemi APT12M80B technical specifications.
General
Package/Case
TO-247-3
Continuous Drain Current (ID)
13A
Current Rating
12A
Drain to Source Voltage (Vdss)
800V
Fall Time
18ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
2.47nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
335W
Mount
Through Hole
Number of Elements
1
Packaging
Rail/Tube
Power Dissipation
335W
Radiation Hardening
No
Rds On Max
800mR
RoHS Compliant
Yes
Series
POWER MOS 8™
Turn-Off Delay Time
60ns
Turn-On Delay Time
14ns
DC Rated Voltage
800V
Compliance
RoHS
Compliant
Datasheet
Microsemi APT12M80B Datasheet
Download the complete datasheet for Microsemi APT12M80B to view detailed technical specifications.
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