N-Channel Power MOSFET featuring 1000V drain-source voltage and 14A continuous drain current. This silicon Metal-oxide Semiconductor FET offers 0.88 ohm drain-source resistance and a maximum power dissipation of 500W. Designed for through-hole mounting in a TO-247 package, it operates from -55°C to 150°C and is RoHS compliant. Key switching parameters include a 28ns turn-on delay and a 26ns fall time.
PackageTO-247-3
Current Rating14A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Microsemi APT14M100B technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 14A |
| Current Rating | 14A |
| Drain to Source Resistance | 710mR |
| Drain to Source Voltage (Vdss) | 1kV |
| Fall Time | 26ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 5.31mm |
| Lead Free | Lead Free |
| Length | 21.46mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Polarity | N-CHANNEL |
| Power Dissipation | 500W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 95ns |
| Turn-On Delay Time | 28ns |
| DC Rated Voltage | 1kV |
| Weight | 1.340411oz |
| Width | 16.26mm |
Compliance
| RoHS | Compliant |
Datasheet
Microsemi APT14M100B Datasheet
Download the complete datasheet for Microsemi APT14M100B to view detailed technical specifications.
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