Microsemi
APT15F60B
Power Field-Effect Transistor, 16A I(D), 600V, 0.43ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3
PackageTO-247-3
Current Rating15A
MountingThrough Hole
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Technical Specifications
Microsemi APT15F60B technical specifications.
General
Package/Case
TO-247-3
Continuous Drain Current (ID)
16A
Current Rating
15A
Drain to Source Voltage (Vdss)
600V
Fall Time
15ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
2.882nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
290W
Mount
Through Hole
Packaging
Rail/Tube
Radiation Hardening
No
Rds On Max
430mR
RoHS Compliant
Yes
Series
POWER MOS 8™
Turn-Off Delay Time
49ns
Turn-On Delay Time
16ns
DC Rated Voltage
600V
Compliance
RoHS
Compliant
Datasheet
Microsemi APT15F60B Datasheet
Download the complete datasheet for Microsemi APT15F60B to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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