The APT15GP60BDQ1G is a 600V insulated gate bipolar transistor (IGBT) with a maximum collector current of 56A. It is packaged in a TO-247 flange mount package and is available in a rail/tube packaging option. The device is rated for operation between -55°C and 150°C and is compliant with RoHS regulations. The APT15GP60BDQ1G features a turn-on delay time of 8ns and a turn-off delay time of 29ns.
PackageTO-247
Current Rating15A
MountingThrough Hole
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Technical Specifications
Microsemi APT15GP60BDQ1G technical specifications.
General
| Package/Case | TO-247 |
| Collector Emitter Voltage (VCEO) | 600V |
| Current Rating | 15A |
| Lead Free | Lead Free |
| Max Collector Current | 56A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 29ns |
| Turn-On Delay Time | 8ns |
| DC Rated Voltage | 600V |
Compliance
| RoHS | Compliant |
Datasheet
Microsemi APT15GP60BDQ1G Datasheet
Download the complete datasheet for Microsemi APT15GP60BDQ1G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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