Microsemi
APT18M80B
Power Field-Effect Transistor, 19A I(D), 800V, 0.53ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3
PackageTO-247-3
Current Rating18A
MountingThrough Hole
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Technical Specifications
Microsemi APT18M80B technical specifications.
General
Package/Case
TO-247-3
Continuous Drain Current (ID)
19A
Current Rating
18A
Drain to Source Voltage (Vdss)
800V
Fall Time
27ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
3.76nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
500W
Mount
Through Hole
Packaging
Rail/Tube
Radiation Hardening
No
Rds On Max
530mR
RoHS Compliant
Yes
Series
POWER MOS 8™
Turn-Off Delay Time
95ns
Turn-On Delay Time
21ns
DC Rated Voltage
800V
Compliance
RoHS
Compliant
Datasheet
Microsemi APT18M80B Datasheet
Download the complete datasheet for Microsemi APT18M80B to view detailed technical specifications.
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