Microsemi
APT20N60BC3G
Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN
PackageTO-247-3
Current Rating20.7A
MountingThrough Hole
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Technical Specifications
Microsemi APT20N60BC3G technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 20.7A |
| Current Rating | 20.7A |
| Drain to Source Voltage (Vdss) | 600V |
| Input Capacitance | 2.44nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 208W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Rds On Max | 190mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| DC Rated Voltage | 600V |
Compliance
| RoHS | Compliant |
Datasheet
Microsemi APT20N60BC3G Datasheet
Download the complete datasheet for Microsemi APT20N60BC3G to view detailed technical specifications.
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