Microsemi
APT25GP120BDQ1G
Insulated Gate Bipolar Transistor, 69A I(C), 1200V V(BR)CES, N-Channel, TO-247, ROHS COMPLIANT, TO-247, 3 PIN
PackageTO-247
Current Rating69A
MountingThrough Hole
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Technical Specifications
Microsemi APT25GP120BDQ1G technical specifications.
General
Package/Case
TO-247
Collector Emitter Saturation Voltage
3.3V
Collector Emitter Voltage (VCEO)
1.2kV
Collector-emitter Voltage-Max
1.2kV
Continuous Collector Current
69A
Current Rating
69A
Height
5.31mm
Lead Free
Lead Free
Length
21.46mm
Max Collector Current
69A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
417W
Mount
Through Hole
Package Quantity
1
Packaging
Rail/Tube
Radiation Hardening
No
RoHS Compliant
Yes
DC Rated Voltage
1.2kV
Weight
1.340411oz
Width
16.26mm
Compliance
RoHS
Compliant
Datasheet
Microsemi APT25GP120BDQ1G Datasheet
Download the complete datasheet for Microsemi APT25GP120BDQ1G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.