N-Channel Power MOSFET, featuring a 500V drain-source voltage and 30A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 0.19ohm drain-source resistance and a maximum power dissipation of 415W. Designed for through-hole mounting in a TO-247-3 package, it operates from -55°C to 150°C and is RoHS compliant. Key switching characteristics include a 20ns turn-on delay and 17ns fall time.
PackageTO-247-3
Current Rating30A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Microsemi APT30F50B technical specifications.
General
Package/Case
TO-247-3
Continuous Drain Current (ID)
30A
Current Rating
30A
Drain to Source Resistance
170mR
Drain to Source Voltage (Vdss)
500V
Fall Time
17ns
Gate to Source Voltage (Vgs)
30V
Height
5.31mm
Input Capacitance
4.525nF
Lead Free
Lead Free
Length
21.46mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
415W
Mount
Through Hole
Number of Elements
1
Package Quantity
1
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
415W
Radiation Hardening
No
Rds On Max
190mR
RoHS Compliant
Yes
Series
POWER MOS 8™
Turn-Off Delay Time
50ns
Turn-On Delay Time
20ns
DC Rated Voltage
500V
Weight
1.340411oz
Width
16.26mm
Compliance
RoHS
Compliant
Datasheet
Microsemi APT30F50B Datasheet
Download the complete datasheet for Microsemi APT30F50B to view detailed technical specifications.
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