Microsemi
APT30F50S
Power Field-Effect Transistor, 30A I(D), 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D3PAK-3
PackageTO-268-3
MountingSurface Mount
Power415W
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Technical Specifications
Microsemi APT30F50S technical specifications.
General
Package/Case
TO-268-3
Continuous Drain Current (ID)
30A
Drain to Source Voltage (Vdss)
500V
Input Capacitance
4.525nF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
415W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Rail/Tube
Power Dissipation
415W
Radiation Hardening
No
Rds On Max
190mR
RoHS Compliant
Yes
Series
POWER MOS 8™
Compliance
RoHS
Compliant
Datasheet
Microsemi APT30F50S Datasheet
Download the complete datasheet for Microsemi APT30F50S to view detailed technical specifications.
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