N-Channel Power MOSFET featuring 600V drain-source voltage and 31A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 0.15 ohm drain-source resistance and a maximum power dissipation of 355W. Designed for chassis mounting with screw terminals, it operates within a temperature range of -55°C to 150°C. The component is RoHS compliant and packaged in a SOT-227-4 case.
PackageSOT-227-4
MountingChassis Mount, Screw
PolarityN-CHANNEL
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Technical Specifications
Microsemi APT30F60J technical specifications.
General
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 31A |
| Drain to Source Resistance | 120mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 44ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.6mm |
| Input Capacitance | 8.59nF |
| Length | 38.2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 355W |
| Mount | Chassis Mount, Screw |
| Number of Channels | 1 |
| Package Quantity | 19 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 150mR |
| RoHS Compliant | Yes |
| Series | POWER MOS 8™ |
| Turn-Off Delay Time | 145ns |
| Turn-On Delay Time | 48ns |
| Weight | 1.058219oz |
| Width | 25.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Microsemi APT30F60J Datasheet
Download the complete datasheet for Microsemi APT30F60J to view detailed technical specifications.
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