APT30GP60BDQ1G

Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-247, ROHS COMPLIANT PACKAGE-3

PackageTO-247

Current Rating30A

MountingThrough Hole

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Microsemi APT30GP60BDQ1G technical specifications.

Package/Case

TO-247

Collector Emitter Voltage (VCEO)

600V

Current Rating

30A

Lead Free

Max Collector Current

100A

Max Operating Temperature

150°C

Min Operating Temperature

-55°C

Mount

Through Hole

Radiation Hardening

RoHS Compliant

Yes

DC Rated Voltage

600V

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.