Microsemi
APT30N60BC6
Power Field-Effect Transistor, 30A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN
PackageTO-247-3
MountingThrough Hole
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Technical Specifications
Microsemi APT30N60BC6 technical specifications.
General
Package/Case
TO-247-3
Continuous Drain Current (ID)
30A
Drain to Source Voltage (Vdss)
600V
Fall Time
48ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
2.267nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
219W
Mount
Through Hole
Packaging
Rail/Tube
Radiation Hardening
No
Rds On Max
125mR
RoHS Compliant
Yes
Series
CoolMOS™
Turn-Off Delay Time
74ns
Turn-On Delay Time
9ns
Compliance
RoHS
Compliant
Datasheet
Microsemi APT30N60BC6 Datasheet
Download the complete datasheet for Microsemi APT30N60BC6 to view detailed technical specifications.
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