N-Channel Power MOSFET featuring 600V drain-source voltage and 38A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 99mΩ drain-to-source resistance. Designed for through-hole mounting in a TO-247 package, it boasts a maximum power dissipation of 278W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 14ns turn-on delay and a 69ns fall time.
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
Power278W
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Technical Specifications
Microsemi APT38N60BC6 technical specifications.
General
Package/Case
TO-247-3
Continuous Drain Current (ID)
38A
Drain to Source Resistance
99mR
Drain to Source Voltage (Vdss)
600V
Fall Time
69ns
Gate to Source Voltage (Vgs)
20V
Height
5.31mm
Input Capacitance
2.826nF
Lead Free
Lead Free
Length
21.46mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
278W
Mount
Through Hole
Number of Elements
1
Package Quantity
1
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
278W
Radiation Hardening
No
Rds On Max
99mR
RoHS Compliant
No
Series
CoolMOS™
Turn-Off Delay Time
118ns
Turn-On Delay Time
14ns
Weight
1.340411oz
Width
16.26mm
Compliance
RoHS
Not CompliantNo
Datasheet
Microsemi APT38N60BC6 Datasheet
Download the complete datasheet for Microsemi APT38N60BC6 to view detailed technical specifications.
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